2
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1A (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 68
Vdc, VGS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28
Vdc, VGS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
500
nAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 40
μAdc)
VGS(th)
1.5
2.2
3.5
Vdc
Gate Quiescent Voltage
(VDS
= 28 Vdc, I
D
= 160 mAdc)
VGS(Q)
?
2.8
?
Vdc
Fixture Gate Quiescent Voltage
(1)
(VDD
= 28 Vdc, I
D
= 160 mAdc, Measured in Functional Test)
VGG(Q)
2.2
3.1
4.4
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 0.4 Adc)
VDS(on)
?
0.27
0.4
Vdc
Dynamic Characteristics (2)
Reverse Transfer Capacitance
(VDS
= 28
Vdc ±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
11.6
?
pF
Output Capacitance
(VDS
= 28
Vdc ±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
?
22.9
?
pF
Functional Tests (3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, IDQ
= 160 mA, Pout
= 3 W Avg., f = 2600 MHz, Single-Carrier
W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @
0.01% Probability on CCDF.
Power Gain
Gps
12.5
14
16
dB
Drain Efficiency
ηD
19
22
?
%
Adjacent Channel Power Ratio
ACPR
?
-45
-42
dBc
Input Return Loss
IRL
?
-18
-9
dB
1. VGG
= 11/10 x V
GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally input matched.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
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